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STB6NM60N Даташит - ST-Microelectronics

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Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the STMicroelectronics’ strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high-efficiency converters.

Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Application
■ Switching applications

 

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Компоненты Описание
PDF
производитель
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