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STB6N52K3 Даташит - ST-Microelectronics

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Description
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.

Features
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
   characteristics
■ Zener-protected

Application
   Switching applications

 

Номер в каталоге
Компоненты Описание
PDF
производитель
N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP SuperMESH3™ Power MOSFET ( Rev : 2008 )
STMicroelectronics
N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics
N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK
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N-channel 525 V, 0.95 Ω, 6 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3™ Power MOSFET
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N-channel 525 V, 0.84 Ω, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET
STMicroelectronics
N-channel 525 V, 0.84 Ω, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET ( Rev : 2008 )
STMicroelectronics
N-channel 525 V, 0.41 Ω, 10 A SuperMESH3™ Power MOSFET in D²PAK,TO-220FP and TO-220 packages
STMicroelectronics
N-channel 525 V, 1.28 Ω, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh™ Power MOSFET
STMicroelectronics
N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220
STMicroelectronics

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