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CEU3100 Даташит - DOINGTER

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CEU3100
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER
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Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.

Features:
1) VDS=30V,ID=55A,RDS(ON)<10mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.

 

Номер в каталоге
Компоненты Описание
PDF
производитель
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified

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