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AP9930GM-HF Даташит - DOINGTER

Номер в каталоге
Компоненты Описание
производитель
AP9930GM-HF
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER
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Description:
This N-Channel and P-Channel MOSFET use advanced trench Technology To provide excellent RDS(ON), low gate charge. This device may be usedto form a level shifted highside switch, and for a host ofother application.

Features:
1) N-Channel:V DS=30V,ID= 6A,RDS(ON)<32mΩ @VGS=10V
   P-Channel:VDS=-30V,ID=-6A,RDS(ON)<65mΩ @VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

 

Номер в каталоге
Компоненты Описание
PDF
производитель
N-Channel and P-Channel MOSFET use advanced trench Technology
Unspecified
N-Channel and P-Channel MOSFET use advanced trench Technology
Unspecified
N-Channel and P-Channel MOSFET use advanced trench Technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
Unspecified

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