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AP9926GM-HF Даташит - DOINGTER

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производитель
AP9926GM-HF
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER
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Description:
This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=20V,ID=6.5A,RDS(ON)<24mΩ @VGS=4.5V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

 

Номер в каталоге
Компоненты Описание
PDF
производитель
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
Unspecified

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