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2SK579 Даташит - VBSEMI

Номер в каталоге
Компоненты Описание
производитель
2SK579
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
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2SK579 image

FEATURES
• Low Gate Charge Qg Results in Simple Drive
   Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
   Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
   and Current
• Compliant to RoHS directive 2002/95/EC

 

Номер в каталоге
Компоненты Описание
PDF
производитель
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd

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