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Компоненты Описание
BZX55B11 Просмотр технического описания (PDF) - Jiangsu High diode Semiconductor Co., Ltd
Номер в каталоге
Компоненты Описание
производитель
BZX55B11
DO-35 Glass-Encapsulate Diodes
Jiangsu High diode Semiconductor Co., Ltd
BZX55B11 Datasheet PDF : 6 Pages
1
2
3
4
5
6
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
BZX55B..
Zener voltage
range
Part Number
BZX55B2V7
BZX55B3V0
BZX55B3V3
BZX55B3V6
BZX55B3V9
BZX55B4V3
BZX55B4V7
BZX55B5V1
BZX55B5V6
BZX55B6V2
BZX55B6V8
BZX55B7V5
BZX55B8V2
BZX55B9V1
BZX55B10
BZX55B11
BZX55B12
BZX55B13
BZX55B15
BZX55B16
BZX55B18
BZX55B20
BZX55B22
BZX55B24
BZX55B27
BZX55B30
BZX55B33
BZX55B36
BZX55B39
BZX55B43
BZX55B47
BZX55B51
BZX55B56
BZX55B62
BZX55B68
BZX55B75
V
Z
at I
ZT
V
Min.
Max.
2.64
2.76
2.94
3.06
3.24
3.36
3.52
3.68
3.82
3.98
4.22
4.38
4.6
4.8
5
5.2
5.48
5.72
6.08
6.32
6.66
6.94
7.35
7.65
8.04
8.36
8.92
9.28
9.8
10.2
10.78
11.22
11.76
12.24
12.74
13.26
14.7
15.3
15.7
16.3
17.64
18.36
19.6
20.4
21.55
22.45
23.5
24.5
26.4
27.6
29.4
30.6
32.4
33.6
35.3
36.7
38.2
39.8
42.1
43.9
46.1
47.9
50
52
54.9
57.1
60.8
63.2
66.6
69.4
73
76.5
Dynamic resistance
R
ZJT
at I
ZT
f = 1 KH
Z
R
ZJK
at I
ZK
f = 1 KH
Z
Ω
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
Test current
I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Temperature
Coefficient
TK
VZ
%
/K
Min.
Max.
- 0.09
- 0.06
- 0.08
- 0.05
- 0.08
- 0.05
- 0.08
- 0.05
- 0.08
- 0.05
- 0.06
- 0.03
- 0.05
0.02
- 0.02
0.02
- 0.05
0.05
0.03
0.06
0.03
0.07
0.03
0.07
0.03
0.08
0.03
0.09
0.03
0.1
0.03
0.11
0.03
0.11
0.03
0.11
0.03
0.11
0.03
0.11
0.03
0.11
0.03
0.11
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
0.04
0.12
Test current
Reverse leakage current
I
ZK
I
R
at
T
amb
=25
℃
I
R
at
T
amb
=150
℃
at V
R
mA
μ
A
V
1
< 10
< 50
1
1
<4
< 40
1
1
<2
< 40
1
1
<2
< 40
1
1
<2
< 40
1
1
<1
< 20
1
1
< 0.5
< 10
1
1
< 0.1
<2
1
1
< 0.1
<2
1
1
< 0.1
<2
2
1
< 0.1
<2
3
1
< 0.1
<2
5
1
< 0.1
<2
6.2
1
< 0.1
<2
6.8
1
< 0.1
<2
7.5
1
< 0.1
<2
8.2
1
< 0.1
<2
9.1
1
< 0.1
<2
10
1
< 0.1
<2
11
1
< 0.1
<2
12
1
< 0.1
<2
13
1
< 0.1
<2
15
1
< 0.1
<2
16
1
< 0.1
<2
18
1
< 0.1
<2
20
1
< 0.1
<2
22
1
< 0.1
<2
24
1
< 0.1
<2
27
0.5
< 0.1
<5
30
0.5
< 0.1
<5
33
0.5
< 0.1
<5
36
0.5
< 0.1
< 10
39
0.5
< 0.1
< 10
43
0.5
< 0.1
< 10
47
0.5
< 0.1
< 10
51
0.5
< 0.1
< 10
56
H
igh Diode Semiconductor
3
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