INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3547
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
12
V
0.1 μA
1.0 μA
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
35
130
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
3
4
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
1.05 1.35 pF
rbb’ • CC Base Time Constant
IC= 5mA ; VCB= 10V;f= 30MHz
4.5 10
ps
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