BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS633AC
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
10
DC Operation
1·0
0·1
0·01
1·0
BD245
BD245A
BD245B
BD245C
10
100
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
1000
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
100
TIS633AA
80
60
40
20
0
0
25
50
75
100 125 150
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.