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Компоненты Описание
TIP33C Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
TIP33C
Silicon NPN Power Transistors
Inchange Semiconductor
TIP33C Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
TIP33/33A/33B/33C
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP33
V
CEO
Collector-emitter
sustaining voltage
TIP33A
TIP33B
I
C
=30mA ;I
B
=0
TIP33C
V
CEsat-1
Collector-emitter saturation voltage I
C
=3A ;I
B
=0.3A
V
CEsat-2
Collector-emitter saturation voltage I
C
=10A; I
B
=2.5A
V
BE-1
Base-emitter on voltage
I
C
=3A ; V
CE
=4V
V
BE-2
Base-emitter on voltage
I
C
=10A ; V
CE
=4V
I
CEO
Collector
cut-off current
TIP33/33A V
CE
=30V; I
B
=0
TIP33B/33C V
CE
=60V; I
B
=0
TIP33
V
CE
=40V;V
EB
=0
I
CES
Collector
cut-off current
TIP33A
TIP33B
V
CE
=60V;V
EB
=0
V
CE
=80V;V
EB
=0
TIP33C
V
CE
=100V;V
EB
=0
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
h
FE-1
DC current gain
I
C
=1A ; V
CE
=4V
h
FE-2
DC current gain
I
C
=3A ; V
CE
=4V
f
T
Transition frequency
I
C
=0.5A ; V
CE
=10V;f=1MHz
MIN TYP. MAX UNIT
40
60
V
80
100
1.0
V
4.0
V
1.6
V
3.0
V
0.7
mA
0.4
mA
1.0
mA
40
20
100
3.0
MHz
2
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