BF 550
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
DC current gain
IC = 1 mA, VCE = 10 V
Base-emitter voltage
IC = 1 mA, VCE = 10 V
AC Characteristics
Transition frequency
IC = 1 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, VBE = 0 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, VBE = 0 V, f = 1 MHz
Noise figure
VCE = 10 V
IC = 1 mA, f = 100 kHz, RS = 300 Ω
IC = 2 mA, f = 100 MHz, RS = 60 Ω
Y parameters, common emitter
IC = 1 mA, VCE = 10 V
f = 0.45 … 10 MHz
f = 500 kHz
f = 10 MHz
Symbol
Values
Unit
min. typ. max.
V(BR) CE0 40
V(BR) CB0 40
V(BR) EB0 4
ICB0
–
hFE
50
VBE
–
–
–
V
–
–
–
–
–
100 nA
–
250 –
0.72 –
V
fT
–
350 –
MHz
Ccb
–
0.33 –
pF
Cce
–
0.67 –
F
dB
–
2
–
–
3.4 –
g11e
–
C11e
–
I y21e I –
C22e
–
g22e
–
g22e
–
550 –
µS
17 –
pF
35 –
mS
1.3 –
pF
5
8
µS
5
10
µS
Semiconductor Group
2