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Номер в каталоге
Компоненты Описание
2N6661 Просмотр технического описания (PDF) - Microchip Technology
Номер в каталоге
Компоненты Описание
производитель
2N6661
N-Channel, Enhancement-Mode, Vertical DMOS FET
Microchip Technology
2N6661 Datasheet PDF : 10 Pages
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2N6661
THERMAL CHARACTERISTICS
Package
TO-39
I
D
(1)
continuous
(mA)
350
I
D
pulsed
(A)
3.0
Power
Dissipation
@T
A
= 25°C (W)
6.25
Note 1:
I
D
(continuous) is limited by max rated T
J
.
Product Summary
BV
DSX
/BV
DGS
(V)
90
R
DS(ON)
(max) (
Ω
)
4.0
I
DR
(1)
(mA)
350
I
DRM
(A)
3.0
I
DSS
(min) (A)
1.5
2.0 PIN DESCRIPTION
The locations of the pins are listed in
Package Types
and
Packaging Information.
TABLE 2-1: PIN DESCRIPTION
Pin # TO-39
1
2
3
Function
SOURCE
GATE
DRAIN
2016 Microchip Technology Inc.
DS20005516A-page 3
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