Memory ICs
BR93LC46 / BR93LC46F / BR93LC46RF / BR93LC46FV
For low voltage operation (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)
Parameter
SK clock frequency
SK "H" time
SK "L" time
CS "L" time
CS setup time
DI setup time
CS hold time
DI hold time
Data "1" output delay time
Data "0" output delay time
Time from CS to output confirmation
Time from CS to output High impedance
Write cycle time
Symbol
fSK
tSKH
tSKL
tCS
tCSS
tDIS
tCSH
tDIH
tPD1
tPD0
tSV
tDF
tE / W
Min.
—
1
1
1
200
400
0
400
—
—
—
—
—
Typ. Max. Unit
— 250 kHz
—
— µs
—
— µs
—
— µs
—
— ns
—
— ns
—
— ns
—
— ns
—
2
µs
—
2
µs
—
2
µs
— 400 ns
—
25 ms
When reading at low voltage (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 2.0V)
Parameter
Symbol Min. Typ. Max.
Unit
SK clock frequency
fSK
—
—
200
kHz
SK "H" time
tSKH
2
—
—
µs
SK "L" time
tSKL
2
—
—
µs
CS "L" time
tCS
2
—
—
µs
CS setup time
tCSS
400
—
—
ns
DI setup time
tDIS
800
—
—
ns
CS hold time
tCSH
0
—
—
ns
DI hold time
tDIH
800
—
—
ns
Data "1" output delay time
tPD1
—
—
4
µs
Data "0" output delay time
tPD0
—
—
4
µs
Time from CS to output high impedance tDF
—
—
800
ns
᭺ Not designed for radiative rays.
5