G25N120H3(2014) Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

производитель

G25N120H3
(Rev.:2014)

High speed switching series third generation

Infineon Technologies 

IGW25N120H3

Highspeedswitchingseriesthirdgeneration

2.0

Eoff

1.8

Eon

Ets

1.6

1.2

Eoff

Eon

Ets

1.0

1.4

0.8

1.2

1.0

0.6

0.8

0.4

0.6

0.4

0.2

0.2

0.0

0

5

10

15

20

25

IC,COLLECTORCURRENT[A]

0.0

0

5

10

15

20

25

rG,GATERESISTOR[Ω]

Figure 1. Typicalswitchingenergylossesasafunction Figure 2. Typicalswitchingenergylossesasafunction

ofcollectorcurrent

ofgateresistor

(ind.load,Tj=125°C,VCE=800V,VGE=15/0V,

(ind.load,Tj=125°C,VCE=800V,VGE=15/0V,

rG=3Ω,DiodeIDH15S120)

IC=10A,DiodeIDH15S120)

0.8

Eoff

Eon

Ets

0.8

Eoff

Eon

0.7

Ets

0.6

0.6

0.5

0.4

0.4

0.3

0.2

0.2

0.1

0.0

0.0

25

50

75

100

125

400

500

600

700

800

Tj,JUNCTIONTEMPERATURE[°C]

VCE,COLLECTOR-EMITTERVOLTAGE[V]

Figure 3. Typicalswitchingenergylossesasafunction Figure 4. Typicalswitchingenergylossesasafunction

ofjunctiontemperature

ofcollectoremittervoltage

(indload,VCE=800V,VGE=15/0V,IC=10A,

(ind.load,Tj=125°C,VGE=15/0V,IC=10A,

rG=3Ω,DiodeIDH15S120)

rG=3Ω,DiodeIDH15S120)

10a

Rev.2.1,2014-02-27

Share Link: