GF1D(2011) Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
GF1D Datasheet PDF : 4 Pages
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GF1A thru GF1M
Vishay General Semiconductor
10
1
0.1
0.01
0.4
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
30
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
1
10
TJ = 100 °C
0.1
0.01
0
TJ = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1
0.1
0.01
Mounted on
0.2" x 0.27" (5.0 mm x 7.0 mm)
Copper Pad Areas
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214BA (GF1)
Cathode Band
0.066 (1.68)
0.040 (1.02)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.076 (1.93)
MAX.
0.118 (3.00)
0.100 (2.54)
0.060 (1.52)
0.030 (0.76)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.0065 (0.17)
0.006 (0.152) TYP.
0.226 (5.74)
0.196 (4.98)
0.108 (2.74)
0.098 (2.49)
0.060 (1.52)
MIN.
0.114 (2.90)
0.094 (2.39)
0.220 (5.58)
REF.
Document Number: 88617 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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