UTC2SA1020 PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE1
RANK
RANGE
O
70 - 140
Y
120 - 240
TYPICAL PERFORMANCE CHARACTERISTICS
VCE-IC
-1.0
IB=-5mA
-10
-20
-40 -80
I(tot)
-0.8
mA
-120
-0.6
-160
-0.4
-200
-0.2
0
0
-1.0
COMMON EMITTER
Ta=25 ℃
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
Collector Current Ic(A)
VCE-IC
IB=-10mA -20 -30 -40 -60
-0.8
I(tot) -80
mA
-0.6
-120
-160
-0.4
-200
-0.2
0
0
COMMON EMITTER
Ta=-55℃
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
Collector Current Ic(A)
VCE-IC
-1.0
-0.8
IB=-5mA
-0.6
-20 -30 -40I(-to6t0) -80
mA -120
-160
-180
-0.4
-200
-0.2
0
0
1000
500
300
COMMON EMITTER
Ta=100℃
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
Collector Current Ic(A)
hFE-Ic
Ta=100℃
COMMON EMITTER
VCE=-2V
I(tot)
mA
100
25℃
50
-55℃
30
10
-0.005 -0.01 -0.03 -0.1 -0.3 -1 -3
Collector Current IC(A)
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R208-021,A