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Номер в каталоге
Компоненты Описание
TYN612MFP Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
TYN612MFP
12 A SCR
STMicroelectronics
TYN612MFP Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
Characteristics
1
Characteristics
TYN612M
Table 2. Electrical characteristics (T
j
= 25° C, unless otherwise specified)
Symbol
Test Conditions
Value
I
GT
V
D
= 12 V R
L
= 140
Ω
V
GT
V
D
= 12 V R
L
= 140
Ω
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= V
DRM
R
L
= 3.3 k
Ω
I
T
= 500 mA Gate open
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
Gate open
I
TM
= 24 A t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
MIN.
1.5
MAX.
5
MIN.
0.5
TYP.
0.7
MAX.
1.3
T
j
= 125° C
MIN.
0.2
MAX.
20
MAX.
40
T
j
=125° C
MIN.
50
T
j
= 25° C
MAX.
1.6
T
j
= 125° C
MAX.
0.85
T
j
= 125° C
MAX.
30
T
j
= 25° C
5
MAX.
T
j
= 125° C
2
Table 3. Thermal resistance
Symbol
R
th(j-c)
Junction to case (DC)
R
th(j-a)
Junction to ambient (DC)
Parameter
TO-220AB
TO-220FPAB
TO-220AB
TO-220FPAB
Value
1.3
4.5
55
55
Unit
mA
V
V
mA
mA
V/µs
V
V
m
Ω
µA
mA
Unit
° C/W
° C/W
Figure 1.
P(W)
12
11
α
= 180°
10
9
8
7
6
5
4
3
2
1
0
0
1
Maximum average power
dissipation versus average
on-state current
I
T(AV)
(A)
2
3
4
5
6
7
8
Figure 2.
Average and D.C. on-state current
versus case temperature
(TO-220AB)
I
T(AV)
(A)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
9
0
25
D.C.
α
= 180°
T
C
(°C)
50
75
100
125
2/8
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