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Номер в каталоге
Компоненты Описание
S8208(2004) Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
S8208
(Rev.:2004)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Toshiba
S8208 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
5
4, 5
2
4
3
2
I
D
– V
DS
1.5
Common source
Ta
=
25°C, Pulse test
1.4
1.3
1
VGS
=
1.2 V
0
0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage V
DS
(V)
TPCS8208
10
4, 5
2
8 1.7
1.6
I
D
– V
DS
Common source
Ta
=
25°C
Pulse test
6
1.5
4
1.4
2
1.3
VGS
=
1.2 V
0
0
1
2
3
4
5
Drain-source voltage V
DS
(V)
I
D
– V
GS
10
Common source
VDS
=
10 V
8
Pulse test
6
4
25
2
100
Ta
= −
55°C
0
0
1
2
3
4
5
Gate-source voltage V
GS
(V)
|Y
fs
| – I
D
100
Ta
= −
55°C
25
100
10
V
DS
– V
GS
0.8
Common source
Ta
=
25°C
Pulse test
0.6
0.4
ID
=
1.5 A
0.2
3
12
6
0
0
2
4
6
8
10
Gate-source voltage V
GS
(V)
R
DS (ON)
– I
D
100
VGS
=
2 V
2.5
4
10
Common source
VDS
=
10 V
Pulse test
1
0.1
1
10
Drain current I
D
(A)
Common source
Ta
=
25°C
Pulse test
1
0.1
1
10
Drain current I
D
(A)
4
2004-07-06
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