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Номер в каталоге
Компоненты Описание
NE321000 Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
NE321000
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
NEC => Renesas Technology
NE321000 Datasheet PDF : 12 Pages
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NE321000
GAIN CALCULATIONS
MSG. =
S
21
S
12
K =
1 + |
∆
|
2
– |S
11
|
2
– |S
22
|
2
2 |S
12
| |S
21
|
MAG. =
S
21
S
12
k
±
k
2
– 1
∆
= S
11
·S
22
– S
21
·S
12
NOISE FIGURE, NF ASSOCIATED GAIN vs.
FREQUENCY
24
V
DS
= 2 V
I
D
= 10 mA
G
a
20
16
1.0
12
0.5
8
NF
0
4
1
2
4 6 8 10 14 20 30
Frequency f (GHz)
NOISE FIGURE, NF ASSOCIATED GAIN vs.
DRAIN CURRENT
V
DS
= 2 V
f = 12 GHz
15
G
a
14
13
2.0
12
1.5
11
1.0
0.5
NF
0
10
20
30
Drain Current I
D
(mA)
4
Data Sheet P14270EJ2V0DS00
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