ESD11B5.0ST5G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
IPP
VC VBR VRWM IIRT
IIRT
VRWM VBR VC V
IPP
Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
VRWM IR (mA) VBR (V) @ IT
(V) @ VRWM
(Note 2)
IT
C (pF)
VC
Device
Device
Marking Max
Max
Per IEC61000−4−2
Min
mA Typ Max
(Note 4)
ESD11B5.0ST5G
11B5
5.0
1.0
5.8
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. Surge current waveforms per Figure 5.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
1.0
12 13.5
Figures 1 and 2
See Below
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
http://onsemi.com
2