BUP200D Просмотр технического описания (PDF) - Siemens AG

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производитель

BUP200D

IGBT With Antiparallel Diode

Siemens AG 

Typ. output characteristics

IC = f(VCE)

parameter: tp = 80 µs, Tj = 125 °C

BUP 200 D

Typ. transfer characteristics

IC = f (VGE)

parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C

Typ. saturation characteristics

VCE(sat) = f (VGE)

parameter: Tj = 25 °C

Typ. saturation characteristics

VCE(sat) = f (VGE)

parameter: Tj = 125 °C

Semiconductor Group

5

Dec-06-1995

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