Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
handbook,2h0alfpage
ID
(mA)
16
MGS303
12
8
4
0
0
10
20
30
40
50
IG1 (µA)
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
Fig.9 Drain current as a function of gate 1 current;
typical values.
handbook,1h5alfpage
ID
(mA)
10
MGS304
5
0
0
1
2
3
4
5
VGG (V)
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
Fig.10 Drain current as a function of gate 1
supply voltage (= VGG); typical values.
handbook,2h0alfpage
ID
(mA)
16
12
8
RG1 = 47 kΩ 68 kΩ
MGS305
82 kΩ
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
4
0
0
2
4
6
8
VGG = VDS (V)
VG2-S = 4 V; Tj = 25 °C.
RG1 connected to VGG; see Fig.21.
Fig.11 Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
16
handbook, halfpage
ID
(mA)
12
8
MGS306
VGG = 5 V
4.5 V
4V
3.5 V
3V
4
0
0
2
4 VG2-S (V) 6
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
Fig.12 Drain current as a function of gate 2 voltage;
typical values.
1999 May 14
6