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Компоненты Описание
BAS70-HT3 Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
BAS70-HT3
Schottky Diodes
Vishay Semiconductors
BAS70-HT3 Datasheet PDF : 3 Pages
1
2
3
BAS70-HT3 to BAS70-06-HT3
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage I
R
= 10
µ
A (pulsed)
Leakage current
V
R
= 50 V, t
p
< 300
µ
s
Forward voltage
t
p
< 300
µ
s, I
F
= 1.0 mA
t
p
< 300
µ
s, I
F
= 15 mA
Capacitance
V
R
= 0 V, f = 1 MHz
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA,
I
rr
= 1 mA, R
L
= 100
Ω
Symbol
Min
V
(BR)R
70
I
R
V
F
V
F
C
tot
t
rr
Package Dimensions in mm
VISHAY
Typ.
Max
Unit
V
20
100
nA
410
mV
1000
mV
1.5
2
pF
5
ns
18057
www.vishay.com
2
ISO Method E
Document Number 85689
Rev. 3, 02-Jun-03
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