APM4548K
Typical Characteristics (Cont.)
P-Channel
Drain-Source On Resistance
1.8
V = -10V
GS
1.6 I = -6A
DS
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0
R @T =25oC:
ON
j
32mΩ
25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
20
10
T =150oC
j
T =25oC
1
j
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VSD - Source - Drain Voltage (V)
1400
1200
1000
Capacitance
Frequency=1MHz
Ciss
800
600
400
200
Crss
0
0
4
Coss
8
12 16
20
-VDS - Drain - Source Voltage (V)
Gate Charge
10
V = -15V
DS
I = -6A
D
8
6
4
2
0
0
5
10
15
20
25
QG - Gate Charge (nC)
Copyright © ANPEC Electronics Corp.
9
Rev. B.1 - Sep., 2005
www.anpec.com.tw