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2SJ278 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SJ278
Silicon P Channel MOS FET
Renesas Electronics
2SJ278 Datasheet PDF : 9 Pages
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5
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9
2SJ278
Reverse Drain Current vs.
Source to Drain Voltage
–1.0
Pulse Test
–0.8
–
10 V
–0.6
–
5 V
–0.4
–0.2
V
GS
= 0, 5 V
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V
SD
(V)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R
L
Vin
–10 V
50
Ω
V
DD
= –30 V
Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
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