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J349 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
J349
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
J349 Datasheet PDF : 6 Pages
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2SJ349
SAFE OPERATING AREA
−
100
ID MAX. (PULSED)
*
−
50
−
30 ID MAX.
(CONTINUOUS)
100
μ
s
*
1 ms
*
10 ms
*
−
10
−
5
DC OPERATION
−
3
Tc
=
25°C
*
SINGLE
NONREPETITIVE
−
1 PULSE Tc
=
25°C
Curves must be
derated linearly with
−
0.5
increase in
temperature.
−
0.3
−
1
−
3
−
10
VDSS MAX.
−
30
−
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
5
2006-11-16
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