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Компоненты Описание
2SD1275 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2SD1275
Silicon NPN Power Transistors
Inchange Semiconductor
2SD1275 Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1275 2SD1275A
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter
breakdown voltage
2SD1275
2SD1275A
I
C
=30mA , I
B
=0
V
CEsat
Collector-emitter saturation voltage I
C
=2A; I
B
=8mA
V
BE
Base-emitter voltage
V
CE
=4V; I
C
=2A
I
CBO
Collector
cut-off current
2SD1275 V
CB
=60V; I
E
=0
2SD1275A V
CB
=80V; I
E
=0
Collector
I
CEO
cut-off current
2SD1275 V
CE
=30V; I
B
=0
2SD1275A V
CE
=40V; I
B
=0
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
h
FE-1
DC current gain
I
C
=1A ; V
CE
=4V
h
FE-2
DC current gain
I
C
=2A ; V
CE
=4V
f
T
Transition frequency
I
C
=0.5A; V
CE
=10V;f=1MHz
Switching times
t
on
Turn-on time
t
s
Storage time
t
f
Fall time
I
C
=2A ;I
B1
=8mA
I
B2
=-8mA;V
CC
=50V
h
FE-2
Classifications
Q
R
2000-5000 4000-10000
MIN TYP. MAX UNIT
60
V
80
2.5
V
2.8
V
1.0 mA
2.0 mA
1000
2000
2.0 mA
10000
20
MHz
0.5
μ
s
4.0
μ
s
1.0
μ
s
2
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