JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
VBEsat Base-emitter saturation voltage
IC=6A; IB=1.2A
ICBO
Collector cut-off current
VCB=400V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
Product Specification
2SC3159
MIN TYP. MAX UNIT
400
V
500
V
7
V
1.0
V
1.2
V
10
μA
10
μA
15
80
10
2