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Компоненты Описание
2SA1093 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2SA1093
Silicon PNP Power Transistors
Inchange Semiconductor
2SA1093 Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter breakdown voltage I
C
=-50mA ,I
B
=0
V
CEsat
Collector-emitter saturation voltage I
C
=-4A; I
B
=-0.4A
V
BE
Base-emitter voltage
I
C
=-4A ; V
CE
=-5V
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-5V
h
FE-2
DC current gain
I
C
=-4A ; V
CE
=-5V
f
T
Transition frequency
I
C
=-1A ; V
CE
=-10V
C
ob
Output capacitance
I
E
=0 ; V
CB
=-10V ;f=1MHz
h
FE-1
Classifications
R
O
Y
55-110 80-160 120-240
Product Specification
2SA1093
MIN TYP. MAX UNIT
-120
V
-1.0 -2.0
V
-1.5 -2.5
V
-50
μ
A
-50
μ
A
55
240
30
90
MHz
150
pF
2
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