1N60L-TA3-R Просмотр технического описания (PDF) - Unisonic Technologies

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Компоненты Описание

производитель

1N60L-TA3-R

1.2 Amps, 600 Volts N-CHANNEL MOSFET

Unisonic Technologies 

1N60

TEST CIRCUITS AND WAVEFORMS (Cont.)

VDS

VGS

RG

10V

Pulse Width ≤ 1μs

Duty Factor ≤0.1%

RL

VDD

D.U.T.

VDS 90%

10%

VGS

tD(ON )

tR

Power MOSFET

tD (OFF)

tF

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Same Type

50kΩ

as D.U.T.

QG

12V

0.2μF

0.3μF

10V

VGS

VDS

QGS

QGD

DUT

3mA

VG

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

L

VDS

BVDSS

10V

RD

tp

VDD

D.U.T.

IAS

tp

Time

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

5 of 8

QW-R502-052,D

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