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SM1L43 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
SM1L43
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
Toshiba
SM1L43 Datasheet PDF : 6 Pages
1
2
3
4
5
6
SM1L43
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off
−
State Current
I
Gate Trigger Voltage
II
III
I
Gate Trigger Current
II
III
Peak On
−
State Voltage
Gate Non
−
Trigger Voltage
Holding Current
Thermal Resistance
Thermal Resistance
SYMBOL
TEST CONDITION
I
DRM
V
GT
I
GT
V
TM
V
GD
I
H
R
th (j
−
c)
R
th (j
−
a)
V
DRM
= 800V
V
D
=12V,
R
L
= 20
Ω
T2 (+) , Gate (+)
T2 (+) , Gate (
−
)
T2 (
−
) , Gate (
−
)
V
D
= 12V,
R
L
= 20
Ω
T2 (+) , Gate (+)
T2 (+) , Gate (
−
)
T2 (
−
) , Gate (
−
)
I
TM
= 1.5A
V
D
= Rated, Tc = 125°C
V
D
= 12V, I
TM
= 1A
Junction to Case, AC
Junction to Ambient, AC
MIN TYP. MAX UNIT
―
―
10
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
10
―
―
10
mA
―
―
10
―
―
1.5
V
0.2
―
―
V
―
―
10
mA
―
―
40 °C / W
―
―
180 °C / W
MARKING
NUMBER
*1
TYPE
SYMBOL
SM1L43
MARK
M1L43
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-10
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