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Номер в каталоге
Компоненты Описание
TK8A500 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
TK8A500
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ)
Toshiba
TK8A500 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
I
D
– V
DS
10
COMMON SOURCE
Tc
=
25°C
10
PULSE TEST
8
8
7.75
6
7.5
7.25
4
7
6.5
2
VGS
=
6 V
0
0
2
4
6
8
DRAIN-SOURCE VOLTAGE V
DS
10
(V)
TK8A50D
I
D
– V
DS
16
10
9
COMMON SOURCE
8.75
Tc
=
25°C
PULSE TEST
12
8.5
8.25
8
8
7.5
4
7
VGS
=
6.5V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
20
COMMON SOURCE
VDS
=
20 V
PULSE TEST
16
12
8
100
Tc
= −
55°C
4
25
0
0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE V
GS
(V)
V
DS
– V
GS
10
COMMON SOURCE
Tc
=
25
℃
PULSE TEST
8
ID
=
8 A
6
www.DataSheet.net/
4
4
2
2
0
0
4
8
12
GATE-SOURCE VOLTAGE
16
V
GS
20
(V)
⎪
Y
fs
⎪
– I
D
10
COMMON SOURCE
VDS
=
20 V
PULSE TEST
Tc
= −
55°C
25
1
100
R
DS (ON)
– I
D
10
1
VGS
=
10 V
、
15 V
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
COMMON SOURCE
Tc
=
25°C
PULSE TEST
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
3
2008-09-16
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