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K3563 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
K3563
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
K3563 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
5
COMMON SOURCE
PULSE TEST
4
3
ID
=
5A
2.5
2
VGS
=
10 V
1.2
1
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3563
I
DR
– V
DS
10
COMMON SOURCE
5
Tc
=
25°C
PULSE TEST
3
1
0.5
0.3
10
5
31
VGS
=
0,
−
1 V
0.1
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1
−
1.2
DRAIN-SOURCE VOLTAGE V
DS
(V)
10000
1000
CAPACITANCE – V
DS
Ciss
100
Coss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
3 5 10
Crss
30 50 100
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
4
3
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
50
40
30
20
10
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
400
VDS
VDD
=
100 V
16
300
200
100
0
0
VGS
12
200
400
8
COMMON SOURCE
ID
=
5 A
Tc
=
25°C
4
PULSE TEST
0
5
10
15
20
25
TOTAL GATE CHARGE Q
g
(nC)
4
2009-09-29
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