NTE2575 Просмотр технического описания (PDF) - NTE Electronics

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производитель

NTE2575

Silicon Complementary Transistors Video Output for HDTV

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Reverse Transfer Capacitance

NTE2574

NTE2575

Cre

VCB = 30V, f = 1MHz

– 2.7 – pF

– 4.0 – pF

Collector–Emitter Saturation Voltage

Emitter Base Saturation Voltage

VCE(sat) IC = 50mA, IB = 5mA

VBE(sat) IC = 50mA, IB = 5mA

– – 1.0 V

– – 1.0 V

.402 (10.2) Max

.224 (5.7) Max

.295

(7.5)

.669

(17.0)

Max

BCE

.122 (3.1)

Dia

.165

(4.2)

.531

(13.5)

Min

.173 (4.4) Max

.114 (2.9) Max

.100 (2.54)

.059 (1.5) Max

NOTE: Tab is isolated

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