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Номер в каталоге(s) : WED3DG644V10D1X-XX
White Electronic Designs Corporation
White Electronic Designs Corporation
Компоненты Описание : 32MB – 4Mx64 SDRAM, UNBUFFERED

DESCRIPTION
The WED3DG644V is a 4Mx64 synchronous DRAM module which consists of four 4Mx16 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSOP package for Serial Presence Detect which are mounted on a 144 pin SO-DIMM multilayer FR4 Substrate.

FEATURES
■ PC100 and PC133 compatible
■ Burst Mode Operation
■ Auto and Self Refresh capability
■ LVTTL compatible inputs and outputs
■ Serial Presence Detect with EEPROM
■ Fully synchronous: All signals are registered on the positive edge of the system clock
■ Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
■ 3.3V ± 0.3V Power Supply
■ 144 Pin SO-DIMM JEDEC
   • D1: 27.94 (1.10”)

Номер в каталоге(s) : ID245P01
Sharp Electronics
Sharp Electronics
Компоненты Описание : 32MB Flash Memory Card

32MB Flash Memory Card

Номер в каталоге(s) : HYS64V64220GBDL
Infineon Technologies
Infineon Technologies
Компоненты Описание : 144 pin SO-DIMM SDRAM Modules

144 pin SO-DIMM SDRAM Modules
512 MB PC100 / PC133

This INFINEON module is an industry standard 144 pin 8-byte Synchronous DRAM (SDRAM) Small Outline Dual In-line Memory Modules (SO-DIMM) which is organised as 64Mx64 high speed array in two memory banks designed for use in non-parity applications. These SO-DIMMs use back side protected P-TFBGA package technology. Decoupling capacitors are mounted on the board.

• u144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications
• Two bank 64M x 64 non-parity module organisation
• suitable for use in PC100 and PC133 applications
• Performance:

• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Uses sixteen 256Mbit SDRAM (32MB x8 ) components in P-TFBGA packages
• 8196 refresh cycles every 64 ms
• Gold contact pad, JEDEC MO-190 outline dimensions
• This module family is fully pin and functional compatible with the latest INTEL SO-DIMM specification
• Importante Notice: This SO-DIMM module is based on 256Mbit SDRAM technology and can be used in applications only, where 256Mbit addressing is supported.

Номер в каталоге(s) : SN9C2038AF
Sonix Technology Co., Ltd
Sonix Technology Co., Ltd
Компоненты Описание : 1.3M PIXELS DIGITAL STILL CAMERA SIGNAL PROCESSOR

General description
SN9C2038AF is a very low cost 1.3M pixel digital still camera processor. It is highly integration single chip solution. It includes CMOS sensor interface, SDRAM interface, NAND flash memory interface, USB interface, compression engine, LCD direct driver, embedded 16bit DSP and low battery detection function.

Feature
■ Support image size up 1280X1008.
■ Dual mode camera- PC cam mode for VGA and DSC mode for SXGA and VGA.
■ Support CMOS image sensor- OV9620/30, MI1300
■ 9-bit CMOS image sensor raw data input can enable companding function.
■ Provide scaling and panning function.
■ Build-in JPEG-lite compression engine..
■ Support SDRAM 4Mb, 16Mb, 64Mb and 128Mb.
■ Support Nand type flash memory 8MB, 16MB, 32MB.
■ Embedded 16bit-DSP for camera control and USB transceiver.
■ 6 USB endpoints: Control pipe, Isochronous pipe, Bulk pipe, Interrupt pipe and Audio pipe.
■ USB 1.1 compliance and support suspend mode.
■ Build in 8segment X 4 common, 1/3 bias status LCD driver.
■ Embedded low battery detection function.
■ Support flashlight function.
■ Build-in 2D edge enhancement function.
■ Build-in auto white balance and color matrix function.
■ 12MHz crystal and 3.3Volt only.
■ 128 pin LQFP package.

Номер в каталоге(s) : MF0032M-05AAXX
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Компоненты Описание : 8/16-bit Data Bus CompactFlash Card

DESCRIPTION

Mitsubishi’s CompactFlash™ cards provide large memory capacities on a device approximately the size of a match box (36.4mm´42.8mm´3.3mm). The cards use an 8/16 bit data bus. Available in 32MB, 64MB, 96MB and 128MB capacities, Mitsubishi’s CompactFlash cards conform to the CompactFlash Specification released from CompactFlash Association.



FEATURES

· Single 5V or 3.3V Supply

· Card density of up to 128MB maximum

· Four PC Card ATA and True IDE modes

· Nonvolatile, No Batteries Required

· High reliability based on internal ECC function

· Fast read/write performance(Target)

     

          Read:1.5MB/s

          Write:850kB/s(64/96/128MB)

          Write:450kB/s(32MB)

     

          Read:1.8MB/s

          Write:1.0MB/s(64/96/128MB)

          Write:550kB/s(32MB)

· 300,000 program/erase cycles



APPLICATIONS

· Computers

· Digital Camera

· Data Communication

· Office Automation

· Industrial

· Consumer


Номер в каталоге(s) : KTD-LM/16
Unspecified
Unspecified
Компоненты Описание : Memory Upgrade Module Kits for Dell® Latitude LM Series

Kingston Technology® manufactures four memory module kits for Dell® Latitude LM Series: KTD-LM/8 (8MB), KTD-LM/16 (16MB), KTD-LM/32 (32MB) and KTD-LM/64 (64MB). Each memory upgrade kit contains two modules (e.g., the KTD-LM/16 kit contains two 8MB modules). Modules must be installed in pairs.


Номер в каталоге(s) : M29DW323
STMicroelectronics
STMicroelectronics
Компоненты Описание : FLASH NOR HIGH DENSITY & CONSUMER

Family Overview

Densities from 32MB to 64Mb

0.15µm process technology

Wide application area covered

technology shrink on going

   higher densities

   improved performances

   Increased reliability



Main Features

M29DW323

32MB (4Mbx8 / 2Mbx16), Boot Block

Access Time

  70, 90ns

Supply Voltage

  Vcc = 2.7V to 3.6V for Program, Erase and Read

  Vpp = 12V for fast Program (optional)

Programming Time

  10µs per Byte/Word typical

  Double Word / Quadruple Byte Program

Low Power Consumption

  Standby and Automatic Standby

Dual Operations:

  Read in one bank or group of banks while Program or Erase in the other



 


Номер в каталоге(s) : MF0032M-05AAXX
Mitsumi
Mitsumi
Компоненты Описание : 8/16-bit Data Bus CompactFlash Card

DESCRIPTION
Mitsubishi’s CompactFlash™ cards provide large memory capacities on a device approximately the size of a match box (36.4mm´42.8mm´3.3mm). The cards use an 8/16 bit data bus.
Available in 32MB, 64MB, 96MB and 128MB capacities, Mitsubishi’s CompactFlash cards conform to the CompactFlash Specification released from CompactFlash Association.

FEATURES
● Single 5V or 3.3V Supply
● Card density of up to 128MB maximum
● Four PC Card ATA and True IDE modes
● Nonvolatile, No Batteries Required
● High reliability based on internal ECC function
● Fast read/write performance(Target)
    <PC Card I/F>
        Read:1.5MB/s
        Write:850kB/s(64/96/128MB)
        Write:450kB/s(32MB)
    <TrueIDE I/F PIO=2>
        Read:1.8MB/s
        Write:1.0MB/s(64/96/128MB)
        Write:550kB/s(32MB)
● 300,000 program/erase cycles

APPLICATIONS
● Computers
● Digital Camera
● Data Communication
● Office Automation
● Industrial
● Consumer

Номер в каталоге(s) : AT45DB321D
Unspecified
Unspecified
Компоненты Описание : 32Mb, 2.5V or 2.7V DataFlash

[adesto™]

Description
The AT45DB321D is a 2.5V or 2.7V, serial interface, sequential access flash memory ideally suited for a wide variety of digital voice-, image-, program code-, and data-storage applications. The AT45DB321D supports the RapidS serial interface for applications requiring very high speed operations. The RapidS serial interface is SPI compatible for frequencies up to 66MHz.

Features
● Single 2.5V - 3.6V or 2.7V - 3.6V supply
● RapidS™ serial interface: 66MHz maximum clock frequency
    ● SPI compatible modes 0 and 3
● User configurable page size
    ● 512 bytes per page
    ● 528 bytes per page
    ● Page size can be factory preconfigured for 512 bytes
● Page program operation
    ● Intelligent programming operation
    ● 8,192 pages (512/528 bytes/page) main memory
● Flexible erase options
    ● Page erase (512 bytes)
    ● Block erase (4KB)
    ● Sector erase (64KB)
    ● Chip erase (32Mb)
● Two SRAM data buffers (512/528 bytes)
    ● Allows receiving data while reprogramming the flash array
● Continuous read capability through entire array
    ● Ideal for code shadowing applications
● Low power dissipation
    ● 7mA active read current ,typical
    ● 25μA standby current, typical
    ● 15μA deep power down, typical
● Hardware and software data protection features
    ● Individual sector
● Sector lockdown for secure code and data storage
    ● Individual sector
● Security: 128-byte security register
    ● 64-byte user programmable space
    ● Unique 64-byte device identifier
● JEDEC standard manufacturer and device ID read
● 100,000 program/erase cycles per page, minimum
● Data retention: 20 years
● Industrial temperature range
● Green (Pb/halide-free/RoHS compliant) packaging options

Номер в каталоге(s) : M29W640D
STMicroelectronics
STMicroelectronics
Компоненты Описание : M29DWxxx FAMILY Multiple Bank

Family Overview

➤ Densities from 32MB to 64Mb
➤ 0.15µm process technology
➤ Wide application area covered
   ➤ technology shrink on going
      ➤ higher densities
      ➤ improved performances
      ➤ Increased reliability

Main Features
32MB (4Mbx8 / 2Mbx16), Boot Block
➤ Access Time
   ➤ 70, 90ns
➤ Supply Voltage
   ➤ Vcc = 2.7V to 3.6V for Program, Erase and Read
   ➤ Vpp = 12V for fast Program (optional)
➤ Programming Time
   ➤ 10µs per Byte/Word typical
   ➤ Double Word / Quadruple Byte Program
➤ Low Power Consumption
   ➤ Standby and Automatic Standby
➤ Dual Operations:
   ➤ Read in one bank or group of banks while Program or Erase in the other

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