2SB545A NTE Equvilent NTE88 T-PNP SI-HI PWR AUDIO AMP

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

Bipolar NPN Device.
    VCEO = 70V
    IC = 80A

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.

Bipolar PNP Device.
    VCEO = 90V
    IC = 50A

Description:

The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications.

Features:

● High Current Capability: IC = 50A (Continuous)

● DC Current Gain: hFE= 15 to 60 @ IC = 25A

● Low Collector–Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A

DESCRIPTION

The TDA7296 is a monolithic integrated circuit in Multiwatt15 package, intended for use as audio class AB amplifier in Hi-Fi field applications (Home Stereo, self powered loudspeakers, Top class TV). Thanks to the wide voltage range and to the high out current capability it is able to supply the highest power into both 4Ω and 8Ω loads even in presence of poor supply regulation, with high Supply Voltage Rejection. The built in muting function with turn on delay simplifies the remote operation avoiding switching on-off noises.

VERY HIGH OPERATING VOLTAGE RANGE (±35V)

DMOS POWER STAGE

HIGH OUTPUT POWER (UP TO 60W MUSIC POWER)

MUTING/STAND-BY FUNCTIONS

NO SWITCH ON/OFF NOISE

NO BOUCHEROT CELLS

VERY LOW DISTORTION

VERY LOW NOISE

SHORT CIRCUIT PROTECTION

THERMAL SHUTDOWN

DESCRIPTION

The TDA7296A is a monolithic integrated circuit in Multiwatt15 package, intended for use as audio class AB amplifier in Hi-Fi field applications (Home Stereo, self powered loudspeakers, Top class TV). Thanks to the wide voltage range and to the high out current capability it is able to supply the highest power into both 4Ω and 8Ω loads even in presence of poor supply regulation, with high Supply Voltage Rejection. The built in muting function with turn on delay simplifies the remote operation avoiding switching on-off noises.

The device provides a circuit for the detection of clipping in the output stages. The output, on open collector, is able to drive system with automatic level control.

VERY HIGH OPERATING VOLTAGE RANGE (±35V)

DMOS POWER STAGE

HIGH OUTPUT POWER (UP TO 60W MUSIC POWER)

MUTING/STAND-BY FUNCTIONS

NO SWITCH ON/OFF NOISE

NO BOUCHEROT CELLS

VERY LOW DISTORTION

VERY LOW NOISE

SHORT CIRCUIT PROTECTION

THERMAL SHUTDOWN

CLIPPING DETECTION OUTPUT

DESCRIPTION

The TDA7296 is a monolithic integrated circuit in Multiwatt15 package, intended for use as audio class AB amplifier in Hi-Fi field applications (Home Stereo, self powered loudspeakers, Topclass TV). Thanks to the wide voltage range and to the high out current capability it is able to supply the high est power into both 4Ω and 8Ω loads even in presence of poor supply regulation, with high Supply Voltage Rejection.

The built in muting function with turn on delay simplifies the remote operation avoiding switching on-off noises.

FEATURES

■ MULTIPOWER BCD TECHNOLOGY

■ VERY HIGH OPERATING VOLTAGE RANGE (±35V)

■ DMOS POWER STAGE

■ HIGH OUTPUT POWER (UP TO 60W MUSIC POWER)

■ MUTING/STAND-BY FUNCTIONS

■ NO SWITCH ON/OFF NOISE

■ NO BOUCHEROT CELLS

■ VERY LOW DISTORTION

■ VERY LOW NOISE

■ SHORT CIRCUIT PROTECTION

■ THERMAL SHUTDOWN

Description:

The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

Features:

• High DC Current Gain: hFE = 1000 (Min) @ IC = 25A

   hFE = 400 (Min) @ IC = 50A

• Diode Protection to Rated IC

• Monolithic Construction w/Built–In Base–Emitter Shunt Resistor

• Junction Temperature to +200°C

Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3
type package designed for use as output devices in general purpose amplifier applications.

Features:

High DC Current Gain: hFE= 1000 (Min) @ IC= 25A
                               hFE= 400 (Min) @ IC= 50A

Diode Protection to Rated IC

Monolithic Construction w/Built–In Base–Emitter Shunt Resistor

Junction Temperature to +200°C

60W Single Output Switching Power Supply