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TPC8111 Даташит

Номер в каталогеКомпоненты Описаниепроизводитель
TPC8111 Silicon P Channel MOS Type (U-MOS IV) Field Effect Transistor Toshiba
Toshiba Toshiba
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Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications


•  Small footprint due to small and thin package
•  Low drain-source ON resistance: RDS (ON)= 8.1 mΩ(typ.)
•  High forward transfer admittance: |Yfs| = 23 S (typ.)
•  Low leakage current: IDSS= −10 µA (max) (VDS= −30 V)
•  Enhancement mode: Vth= −0.8 to −2.0 V (VDS= −10 V, ID= −1 mA)

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