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NT5DS4M32EG Даташит

Номер в каталогеКомпоненты Описаниепроизводитель
NT5DS4M32EG 1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL NANOAMP
NanoAmp Solutions, Inc. NANOAMP
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General Overview
The NT5DS4M32EG is 134,217,728 bits of double data rate synchronous dynamic RAM organized as 4 x 1,048,576 bits by 32 I/Os. Synchronous features with Data Strobe allow extremely high performance up to 400Mbps/pin. I/O transactions are possible on both edges of the clock. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

Features
• VDD = 2.5V±5% , VDDQ = 2.5V±5%
• SSTL_2 compatible inputs/outputs
• 4 banks operation
• MRS cycle with address key programs
    -CAS latency 2,3 (clock)
    -Burst length (2, 4, 8 and Full page)
    -Burst type (sequential & interleave)
• Full page burst length for sequential burst type only
• Start address of the full page burst should be even
• All inputs except data & DM are sampled at the rising edge of the system clock
• Differential clock input(CK & /CK)
• Data I/O transaction on both edges of Data strobe
• 4 DQS (1 DQS/Byte)
• DLL aligns DQ and DQS transaction with Clock transaction
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• DM for write masking only
• Auto & self refresh
• 32ms refresh period (4K cycle)
• 144-Ball FBGA package
• Maximum clock frequency up to 200MHz
• Maximum data rate up to 400Mbps/pin

 

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