Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Главная >>> NANOAMP >>> NT5DS4M32EG Даташит

NT5DS4M32EG Даташит

Номер в каталоге
Компоненты Описание
производитель
Other PDF
  not available.
PDF
DOWNLOAD     
NT5DS4M32EG image

General Overview
The NT5DS4M32EG is 134,217,728 bits of double data rate synchronous dynamic RAM organized as 4 x 1,048,576 bits by 32 I/Os. Synchronous features with Data Strobe allow extremely high performance up to 400Mbps/pin. I/O transactions are possible on both edges of the clock. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

Features
• VDD = 2.5V±5% , VDDQ = 2.5V±5%
• SSTL_2 compatible inputs/outputs
• 4 banks operation
• MRS cycle with address key programs
    -CAS latency 2,3 (clock)
    -Burst length (2, 4, 8 and Full page)
    -Burst type (sequential & interleave)
• Full page burst length for sequential burst type only
• Start address of the full page burst should be even
• All inputs except data & DM are sampled at the rising edge of the system clock
• Differential clock input(CK & /CK)
• Data I/O transaction on both edges of Data strobe
• 4 DQS (1 DQS/Byte)
• DLL aligns DQ and DQS transaction with Clock transaction
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• DM for write masking only
• Auto & self refresh
• 32ms refresh period (4K cycle)
• 144-Ball FBGA package
• Maximum clock frequency up to 200MHz
• Maximum data rate up to 400Mbps/pin

 

Номер в каталоге
Компоненты Описание
PDF
производитель
1M x 32Bit x 4 Banks with Bi-directional Data Strobe and DLL Double Data Rate Synchronous RAM
Samsung
1M x 32Bit x 4 Banks with Bi-directional Data Strobe and DLL Double Data Rate Synchronous RAM (144-Ball FBGA)
Samsung
1M x 32Bit x 4 Banks with Bi-directional Data Strobe and DLL Double Data Rate Synchronous DRAM
Samsung
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
Samsung
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
Samsung
128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks with Differential Data Strobe and DLL GDDR2 SDRAM
Samsung
1M x 16 Bit x 4 Banks Double Data Rate SDRAM
[Elite Semiconductor Memory Technology Inc.
Double Data Rate SDRAM 4M x 16 Bit x 4 Banks
A-Data Technology
1M bits x 16 bits x 4 banks(64-MBIT)synchronous graphics RAM
Integrated Silicon Solution
DOUBLE DATA RATE (DDR) SDRAM MT46V16M8 – 4 Meg x 8 x 4 banks
Micron Technology

Share Link: 

All Rights Reserved© datasheetq.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]