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M13S64164A Даташит

Номер в каталогеКомпоненты Описаниепроизводитель
M13S64164A 1M x 16 Bit x 4 Banks Double Data Rate SDRAM ESMT
[Elite Semiconductor Memory Technology Inc. ESMT
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Features
• JEDEC Standard
• Internal pipelined double-data-rate architecture, two data access per clock cycle
• Bi-directional data strobe (DQS)
• On-chip DLL
• Differential clock inputs (CLK and CLK )
• DLL aligns DQ and DQS transition with CLK transition
• Quad bank operation
• CAS Latency : 2, 2.5, 3
• Burst Type : Sequential and Interleave
• Burst Length : 2, 4, 8
• All inputs except data & DM are sampled at the rising edge of the system clock(CLK)
• Data I/O transitions on both edges of data strobe (DQS)
• DQS is edge-aligned with data for reads; center-aligned with data for WRITE
• Data mask (DM) for write masking only
• For 2.5V parts, VDD = 2.3V ~ 2.7V, VDDQ = 2.3V ~ 2.7V
• Auto & Self refresh
• 64ms refresh period, 4K cycle
• SSTL-2 I/O interface
• 66pin TSOPII and 60 ball BGA package

 

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