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IRL630 Даташит

Номер в каталогеКомпоненты Описаниепроизводитель
IRL630 HEXFET® Power MOSFET IR
International Rectifier IR
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IRL630 image

VDSS = 200V
RDS(on) = 0.40Ω
ID = 9.0A

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

● Dynamic dv/dt Rating
● Repetitive Avalanche Rated
● Logic-Level Gate Drive
● RDS(ON) Specified at VGS = 4V & 5V
● 150°C Operating Temperature
● Fast Switching
● Ease of paralleling

 

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