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IRL1404ZSPBF Даташит

Номер в каталогеКомпоненты Описаниепроизводитель
IRL1404ZSPBF HEXFET® Power MOSFET IR
International Rectifier IR
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Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features
● Logic Level
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free

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