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HYM72V1635GS Даташит - Siemens

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16M × 72-Bit EDO-DRAM Module (ECC - Module)
168pin buffered DIMM Module

The HYM 72V1625/35GS-50/-60 is a 128 MByte DRAM module organized as 16 777 216 words by 72-bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 3164405AT/AJ 16M × 4 EDO-DRAMs in 400 mil wide TSOPII or SOJ- packages mounted together with ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using BiCMOS buffers/line drivers.

• 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications
• 1 bank 16M x 72 organisation
• Optimized for ECC applications
• Extended Data Out ( EDO )
• Performance:
• Single + 3.3V (± 0.3V) supply
• CAS-before-RAS refresh, RAS-only-refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully LVTTL & LVCMOS compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• Parallel Presence detects
• Utilizes eighteen 400mil wide 16M × 4 - EDO- DRAMs and BiCMOS buffers/line drivers
• Two versions : HYM 72V1635GS with TSOPII-components (4 mm thickness)
                           HYM 72V1625GS with SOJ-components (9 mm thickness)
• 4096 refresh cycles / 64 ms with 12 / 12 addressing
• Gold contact pad
• Double sided module with 38.10 mm (1500 mil) height

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Номер в каталоге
Компоненты Описание
PDF
производитель
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