Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Главная >>> Cypress >>> FM1608B-SG Даташит

FM1608B-SG Даташит

Номер в каталогеКомпоненты Описаниепроизводитель
FM1608B-SG 64-Kbit (8 K × 8) Bytewide F-RAM Memory Cypress
Cypress Semiconductor Cypress
Other PDF  2013  
PDF DOWNLOAD     
FM1608B image

Functional Overview
The FM1608B is a 8 K × 8 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory.

Features
■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8
    ❐ High-endurance 100 trillion (1014) read/writes
    ❐ 151-year data retention (see the Data Retention and Endurance table)
    ❐ NoDelay™ writes
    ❐ Advanced high-reliability ferroelectric process
■ SRAM and EEPROM compatible
    ❐ Industry-standard 8 K × 8 SRAM and EEPROM pinout
    ❐ 70-ns access time, 130-ns cycle time
■ Superior to battery-backed SRAM modules
    ❐ No battery concerns
    ❐ Monolithic reliability
    ❐ True surface mount solution, no rework steps
    ❐ Superior for moisture, shock, and vibration
    ❐ Resistant to negative voltage undershoots
■ Low power consumption
    ❐ Active current 15 mA (max)
    ❐ Standby current 25 μA (typ)
■ Voltage operation: VDD = 4.5 V to 5.5 V
■ Industrial temperature: –40°C to +85°C
■ 28-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant

Page Links : 1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18 
 

FM1608B-SG Другие запросы, связанные с производителем

Номер в каталогеКомпоненты ОписаниеPDFпроизводитель
FM1608B-SG 64Kb Bytewide 5V F-RAM Memory View Ramtron International Corporation
DS2506 64-kbit Add-Only Memory View Dallas Semiconductor -> Maxim Integrated
HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133SDRAM View Elpida Memory, Inc
M34D64-R 64 Kbit Serial I²C Bus EEPROM With Hardware Write Control on Top Quarter of Memory View STMicroelectronics
HB52E649E12 512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM View Elpida Memory, Inc
C67401A First - In First - Out (FIFO) 64 X 4, 64 X 5 Cascadable Memory View Advanced Micro Devices
MC-4516CB647XFA 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View Elpida Memory, Inc
M24128-BRCS3G 128 Kbit, 64 Kbitand 32 Kbit serial I²C bus EEPROM View STMicroelectronics
MC-45D32CD641 32 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View Elpida Memory, Inc
M39208 Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory View STMicroelectronics

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]