Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Главная >>> Twtysemi >>> FDN304PZ Даташит

FDN304PZ Даташит

Номер в каталогеКомпоненты Описаниепроизводитель
FDN304PZ P-Channel 1.8V Specified PowerTrench® MOSFET Twtysemi
TY Semiconductor Twtysemi
Other PDF  not available.
PDF DOWNLOAD     
FDN304PZ image

General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features
• –2.4 A, –20 V. RDS(ON) = 52 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V
• Fast switching speed
• ESD protection diode
• High performance trench technology for extremely low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

Applications
• Battery management
• Load switch
• Battery protection

 

FDN304PZ Другие запросы, связанные с производителем

Номер в каталогеКомпоненты ОписаниеPDFпроизводитель
FDN306P P-Channel 1.8V Specified PowerTrench® MOSFET View Fairchild Semiconductor
FDR842P P-Channel 1.8V Specified PowerTrench® MOSFET View Fairchild Semiconductor
SI4467DY P-Channel 1.8V Specified PowerTrench® MOSFET View Fairchild Semiconductor
FDC697P P-Channel 1.8V PowerTrench® MOSFET View Fairchild Semiconductor
SI3445DV P-Channel 1.8V Specified PowerTrench® MOSFET View Fairchild Semiconductor
FDR844P P-Channel 1.8V Specified PowerTrench® MOSFET View Fairchild Semiconductor
FDN304PZ P-Channel 1.8V Specified PowerTrench® MOSFET View Fairchild Semiconductor
FDC606P P-Channel 1.8V Specified PowerTrench® MOSFET View Fairchild Semiconductor
FDG330P P-Channel 1.8V Specified PowerTrench® MOSFET View Fairchild Semiconductor
SI6467DQ P-Channel 1.8V Specified PowerTrench® MOSFET View Fairchild Semiconductor

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2020  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]