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2SK3911 Даташит

Номер в каталогеКомпоненты Описаниепроизводитель
2SK3911 Silicon N-Channel MOS Type (MACHII π-MOSVI) Field Effect Transistor Toshiba
Toshiba Toshiba
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Switching Regulator Applications

• Small gate charge: Qg= 60 nC (typ.)
• Low drain-source ON resistance: RDS (ON)= 0.22 Ω(typ.)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: IDSS= 500 μA (VDS= 600 V)
• Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

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