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2SK3562 Даташит

Номер в каталогеКомпоненты Описаниепроизводитель
2SK3562 Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) Toshiba
Toshiba Toshiba
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Switching Regulator Applications
 

1. Low drain-source ON-resistance: RDS (ON)= 0.9 Ω(typ.)
2.  High forward transfer admittance: |Yfs| = 5.0 S (typ.)
3.  Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

2SK3562

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2SK3562 Другие запросы, связанные с производителем

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