Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Главная >>> Toshiba >>> 2SK1119(F) Даташит

2SK1119(F)-2006 Даташит

Номер в каталогеКомпоненты Описаниепроизводитель
2SK1119(F) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) Toshiba
Toshiba Toshiba
Other PDF  lastest PDF  
PDF DOWNLOAD     
2SK1119(F) image

DC−DC Converter and Motor Drive Applications

● Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.)
● High forward transfer admittance : |Yfs| = 2.0 S (typ.)
● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V)
● Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)

 

2SK1119(F) Другие запросы, связанные с производителем

Номер в каталогеКомпоненты ОписаниеPDFпроизводитель
2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) View Unspecified
2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) View Unspecified
2SK1348 Field Effect Transistor Silicon N Channel MOS Type(L2-π-MOS III) View Unspecified
2SK2320 Field Effect Transistor Silicon N-Channel MOS Type View Unspecified
2SK1741 N channel MOS type silicon field effect transistor View SANYO -> Panasonic
2SK1739A FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE View SANYO -> Panasonic
2SK1358 Field Effect Transistor Silicon N Channel MOS Type View New Jersey Semiconductor
3SK249 Silicon N-Channel Dual Gate MOS Type Field Effect Transistor View New Jersey Semiconductor
2SK941 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(L²-π-MOSIII) View Unspecified
2SK2413 MOS FIELD EFFECT TRANSISTOR / N-Channel MOS Field Effect Transistor View NEC => Renesas Technology

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]